Our products use the innovative technology "SGD package technology method" to manufacture overvoltage protectors with the same characteristics as TVS (Transient Voltage Suppressor), which have the advantages of better surge capacity and more convenient assembly. The product is connected in parallel on the electronic circuit for protection.
Main applicable series: STS, STA, STN
SGD package technology uses two PCBs (with internal wiring) to lead out wafer characteristics. At low voltage (normal condition), this structure maintains a high impedance. At this time, the leakage current is very low to save power. When there is a surge voltage and the voltage exceeds the critical point, the current will breakdown (over voltage occur), and the product impedance will quickly drop to 0.5~3Ω, and the current will be guided to the ground to achieve the function of surge protection.
The I-V curve is shown in the figure above. The current range drawn by this curve is 10-8~40A , and the voltage change is observed within this current range. Three areas can be roughly marked on this figure, the working voltage region, breakdown region and high current region.
In the working voltage area, the leakage current is very low at this time, only about 10-8~2x10-7A level, and the power consumption is quite low.
The surge voltage exceeds a critical point, the product will be breakdown, the surge current can be rapidly connected to ground, the parallel voltage is suppressed to a relatively low level, and this voltage is called the clamping voltage.
If the SGD always works in the working region and breakdown region, the device can maintain the original characteristics for a long time, that is, it has a long life, but if it often works in the high current region, excessive electrical stress and thermal stress will cause affects the structure of the internal grain or grain boundary layer of the device, it will cause the electrical performance deterioration, it will become low voltage resistance, and increased leakage.
