Semiconductor

Parameter applicable range: STS, STA, STN

Working peak reverse voltage (VRWM) :Maximum continuous working DC voltage

VRWM is the recommended maximum continuous operating DC voltage for TVS.

Maximum reverse leakage(IR) :Maximum reverse leakage current

VRWM VRWM is the maximum continuous working DC voltage of TVS. When this voltage is applied to the two poles of TVS, it is in a reverse state, and the current flowing through it should be less than or equal to its maximum reverse leakage current IR.

Breakdown voltage(VBR):Breakdown voltage

VBR is the breakdown voltage of TVS. At 25 ℃, there will be no avalanche below this voltage TVS. When TVS flows through a specified 1mA current (IR), the voltage applied to the two poles of TVS is its breakdown voltage VBR.

Clamping voltage(VCL):Suppressing voltage

The suppression voltage VCL was measured using TLP at IPP=16A and tp=100ns.

Maximum Clamping voltage(VC):Suppressing voltage

Suppress voltage VC at IPP=1A & 4A, measured using 8 * 20 us Surge.

Parasitic capacitance(CESD)Capacitance

The capacitance CESD is determined by the cross-section of the TVS avalanche junction and is measured at a specific frequency of 1MHz. The size of CESD is directly proportional to the current carrying capacity of TVS, and a too large C will cause signal attenuation. Therefore, C is an important parameter for selecting TVS in data interface circuits.

EN_US
ZH_TW EN_US